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3.3V Single-Piece 16Mb
Nonvolatile SRAM
Functional Diagram
CE
V CC
V TP REF
CURRENT-LIMITING
RESISTOR
DELAY TIMING
CIRCUITRY
CHARGER
UNINTERRUPTED
POWER SUPPLY
FOR THE SRAM
V CC
CE
RST
V SW REF
OE
WE
SRAM
DQ0 – DQ7
REDUNDANT LOGIC
ML
CURRENT-LIMITING
RESISTOR
REDUNDANT
SERIES FET
GND
OE
WE
A0 – A20
BATTERY-CHARGING/SHORTING
PROTECTION CIRCUITRY (UL RECOGNIZED)
DS2070W
Detailed Description
The DS2070W is a 16Mb (2048kb x 8 bits) fully static, NV
memory similar in function and organization to the
DS1270W NV SRAM, but containing a rechargeable ML
battery. The DS2070W NV SRAM constantly monitors
V CC for an out-of-tolerance condition. When such a con-
dition occurs, the lithium energy source is automatically
switched on and write protection is unconditionally
enabled to prevent data corruption. There is no limit to
the number of write cycles that can be executed and no
additional support circuitry is required for microprocessor
interfacing. This device can be used in place of SRAM,
EEPROM, or flash components.
The DS2070W assembly consists of a low-power SRAM,
an ML battery, and an NV controller with a battery charg-
er, integrated on a standard 256-ball, (27mm) 2 BGA sub-
strate. Unlike other surface-mount NV memory modules
that require the battery to be removable for soldering, the
internal ML battery can tolerate exposure to convection
reflow soldering temperatures allowing this single-piece
component to be handled with standard BGA assembly
techniques.
The DS2070W also contains a power-supply monitor
output, RST , which can be used as a CPU supervisor
for a microprocessor.
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